Scanning Near-Field Microscopy Of Carrier Lifetimes In M-Plane Ingan Quantum Wells
APPLIED PHYSICS LETTERS(2017)
摘要
Time-resolved scanning near-field photoluminescence (PL) spectroscopy was applied to map carrier lifetimes in wide m-plane InGaN/GaN quantum wells grown on on-axis and miscut substrates. Both radiative and nonradiative lifetimes were found to be spatially nonuniform. Lifetime variations were smaller for quantum wells grown on miscut, as compared to on-axis substrates. Correlation with surface topography showed that largest deviations of recombination times occur at +c planes of pyramidal hillocks of the on-axis sample. Observed correlation between radiative lifetimes and PL peak wavelength was assigned to a partial electron localization. Published by AIP Publishing.
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关键词
carrier lifetimes,quantum,near-field,m-plane
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