A 6v Embedded 90nm Silicon Nanocrystal Nonvolatile Memory

R Muralidhar,Rf Steimle,M Sadd,R Rao,Ct Swift,Ej Prinz,J Yater, L Grieve, K Harber, B Hradsky,S Straub, B Acred, W Paulson,W Chen, L Parker, Sh Anderson, M Rossow, T Merchant, M Paransky,T Huynh, D Hadad,Km Chang,Be White

2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST（2003）

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Abstract

The first functional 6V, 4Mb silicon nanocrystal based nonvolatile memory arrays using conventional 90nm and 0.25mum process technologies have been produced. The technology can be programmed and erased using conventional techniques in floating gate memories and can substantially reduce the cost of embedded Flash at the 90nm node and beyond.

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Key words

silicon,nanoelectronics,microprogramming,nonvolatile memory

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