Design and On-Wafer Characterization of $G$ -Band SiGe HBT Low-Noise Amplifiers

Christopher T. Coen,Ahmet Cagri Ulusoy,Peter Song,Adrian Ildefonso,Mehmet Kaynak,Bernd Tillack,John D. Cressler

IEEE Transactions on Microwave Theory and Techniques（2016）

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摘要

This paper presents the design and thorough on-wafer characterization of two G-band low-noise amplifiers (LNAs) implemented using 0.13-μm silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with peak fT/fmax of 300/500 GHz. The impact of the substrate network and optimized via interconnections on the SiGe HBT performance is investigated to ensure that maximum performance is extracte...

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关键词

Silicon germanium,Heterojunction bipolar transistors,Noise measurement,Gain,Substrates,Impedance

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