Barrier height reconfiguration of graphene/ZnO:N barristor using ferroelectric polymer

K. H. Seo,Jin Ho Yang, J. A. Yoo,Hyeon Jun Hwang,Kyoung Eun Chang,Chang Hoo Shim,Sang Kyung Lee,Chunhum Cho,Yun Ji Kim,Byoung Hun Lee

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)（2016）

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摘要

We demonstrate and explain the operation of PVDF-TrFE/graphene/ZnO:N barristor using electrostatic force microscopy (EFM) poling system. The device was successfully reconfigured using a ferroelectric polymer, PVDF-TrFE. ~10 ³ of device current modulation were achieved. And, it will be very useful for dynamically reconfigurable logic, memory and logic-memory hybrid device applications.

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关键词

logic-memory hybrid device applications,dynamically reconfigurable logic,electrostatic force microscopy poling system,ferroelectric polymer,barristor,graphene,barrier height reconfiguration,ZnO-N,C

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