5.6 A 400×400-Pixel 6μm-Pitch Vertical Avalanche Photodiodes CMOS Image Sensor Based on 150ps-Fast Capacitive Relaxation Quenching in Geiger Mode for Synthesis of Arbitrary Gain Images

Yutaka Hirose,Shinzo Koyama,Toru Okino,Akito Inoue,Shigeru Saito,Yugo Nose,Motonori Ishii,Seiji Yamahira,Shigetaka Kasuga,Mitsuyoshi Mori,Tatsuya Kabe,Kentaro Nakanishi,Manabu Usuda,Akihiro Odagawa,Tsuyoshi Tanaka

2019 IEEE International Solid- State Circuits Conference - (ISSCC)（2019）

Cited 19|Views14

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Abstract

The intensive development of Single-photon avalanche photodiode (SPAD) based CMOS image sensors (CIS) continues, with rapid progress [1–6]. Yet, due to unestablished quenching operation [5,6], realization of SPADs onto a CIS alongside conventional pixel circuitry has been a fundamental challenge.

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Key words

CMOS Image Sensors,CMOS Sensor,Single-Photon Detection,High-Speed Imaging,Pixel-Level ADC

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