Performance ratio study based on a device simulation of a 2D monolithic interconnected Cu(In,Ga)(Se,S)2 solar cell

We use a calibrated realistic 2D device simulation structure of a single cell from a monolithic interconnected Cu(In,Ga)(Se,S)2 solar module to investigate the impact of modifications of the patterning laser scribe P1 and the trench properties on the energy yield. This particularly includes examining the change of the low light behaviour and the performance ratio (PR). In order to study the effects of the P1 characteristics, we performed a variation of the P1 width, the absorber doping concentration within the P1 trench as well as a variation of the Mo(Se,S)2 band gap and the doping concentration. We simulated temperature-dependent current-voltage characteristics for different irradiances and apply the weather data of three different locations to calculate the PRs.