Growth Of Compressively-Strained Gan Films On Si(111) Substrates With Thick Algan Transition And Algan Superlattice Buffer Layers

In this paper, crack-free GaN films with step-graded AlGaN transition layer and AlGaN superlattice layer as buffer layers were grown on Si(111) substrate by metal-organic chemical vapor deposition(MOCVD). The combination of both buffers effectively improves the properties of GaN layer. With the optimization of the buffer structures, high quality compressively-strained GaN layers with thickness up to 3.6 mu m have been obtained on Si(111) substrates (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim