Novel Silicon-Controlled Rectifier With Snapback-Free Performance for High-Voltage and Robust ESD Protection

IEEE Electron Device Letters(2019)

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摘要
A novel snapback-free silicon-controlled rectifier (SFSCR) with P-type Zener implantation (ZP) is developed in a 0.5-μm bipolar CMOS DMOS technology for latch-up immune high-voltage (HV) electrostatic discharge (ESD) protection. The inherent snapback of SCR is successfully suppressed by the novel ZP technique. But, it also brings about a serious degradation in failure current (It2) when compared w...
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关键词
Layout,Electrostatic discharges,Degradation,Cathodes,Rectifiers,Performance evaluation,Resistance
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