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有机反转电致发光器件的负阻特性

LI Jian-Feng,SUN Shuo,ZHANG Chun-lin,OU Gu-ping,ZHANG Fu-Jia

Journal of Lanzhou University(Natural Sciences)（2008）

Cited 23|Views6
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Abstract
对结构为Si/Al/Alq_3/PVK:TPD/PTCDA/ITO的有机反转电致发光器件I-V特性的测量发现,其电压出现了峰值的负阻现象.分析表明:高电压注入时,器件内形成了高浓度的等离子体;载流子寿命和迁移率随注入电压变化;特别是体内出现了严重的电导调制效应使得器件由高阻区变为低阻区,这些是形成负阻特性的主要原因.通过引入双极迁移率和双极扩散系数将空穴和电子的电流连续性方程联合起来,解释了具有负阻区段的I-V特性曲线.
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Key words
current continuity equation,negative resistance,organic light-emitting device,inverted device
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