Effect of N2O Plasma Treatment on The SiNx-based InGaZnO Thin Film Transistors

Indium-gallium-zinc oxide thin film transistor(IGZO-TFT) was fabricated using N 2O plasma treated SiN x film as gate insulator and room-temperature deposited IGZO film as active layer. Comparing with the conventional IGZO-TFT, the saturation mobility increased from 4.5 to 8.1 cm 2·V -1·s -1, threshold voltage reduced from 11.5 to 3.2 V, threshold swing varied from 1.25 to 0.9 V/dec. The trap states in the N 2O plasma treated IGZO-TFT is obviously smaller than that in the conventional IGZO-TFT. Our results indicate that using N 2O plasma treated SiN x film as gate insulator is an effective approach for improving IGZO-TFT performance.