金属有机沉积法制备SrTiO3薄膜
Journal of Materials and Metallurgy（2011）
Abstract
采用金属有机沉积( MOD)法制备了SrTiO3 (STO)外延薄膜作为YBa2Cu3O7-δ涂层导体的缓冲层.以乙酸锶、钛酸丁酯为前驱物配制了Sr离子浓度为0.125 mol ·L-1的SrTiO3前驱溶液.研究了950℃下不同烧结时间(90、120、150 min)对在双轴织构的Ni -W(200)金属基带上沉积STO外延薄膜晶体取向和微观形貌的影响.结果表明,在950℃氩氢混合气氛(Ar - 4％ H2)下适宜于STO薄膜外延生长的最佳烧结时间为120 min；STO缓冲层薄膜表面平整致密,无裂纹和孔洞,具有良好取向,可作为YBa2Cu3O7-δ涂层导体的缓冲层.
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Key words
srtio_3,thin films
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