AlN缓冲层对ZnO薄膜质量的影响
Physics Experimentation（2008）
Abstract
采用脉冲激光沉积法以AlN为缓冲层在Si(100)衬底上制备了ZnO薄膜,并测量了样品的XRD谱、SEM图和PL谱.结果表明,AlN缓冲层可以提高Si衬底上外延生长ZnO薄膜的晶体质量.改变缓冲层的生长温度(50~500℃)所制备样品的测量结果表明,较低温度下生长的AlN缓冲层有利于制备高质量的ZnO外延层薄膜,其中AlN缓冲层生长温度为100℃时外延生长ZnO薄膜晶体质量最好.
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Key words
buffer layer,AlN,ZnO,pulsed laser deposition
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