A Dual-Mode Driver IC With Monolithic Negative Drive-Voltage Capability and Digital Current-Mode Controller for Depletion-Mode GaN HEMT

IEEE Transactions on Power Electronics(2017)

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Abstract
This work presents a driver and controller integrated circuit (IC) for depletion-mode gallium nitride (GaN) high-electron-mobility transistors (HEMTs). The dual-mode driver can be configured for cascode-drive (CD) or HEMT-drive (HD) mode. In the CD mode, a cascode low-voltage DMOS is driven to achieve high-speed normally OFF operation. An active clamping circuit is proposed for the DMOS breakdown ...
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Key words
HEMTs,Gallium nitride,MOSFET,Integrated circuits,High definition video,Logic gates,Manganese
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