A new front-end electronics design for silicon drift detector
Nuclear Science Symposium Conference Record, 2003 IEEE（2003）
摘要
Silicon drift detectors (SDD) are state of the art devices for spectroscopy applications. The utmost energy resolution can be obtained by means of low noise front-end electronics, having shaping time of the order of microseconds. We are proposing a new front-end electronics for applications that may benefit from higher rate capability while maintaining a reasonable spectroscopic resolution. The idea is to combine a high speed semi-Gaussian shaping amplifier (originally designed for gas detectors) with very compact high speed low noise input-output stages. The shaper amplifier is implemented in hybrid technology. The shaping time can be controlled from fins to ions.
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关键词
drift chambers,nuclear electronics,silicon radiation detectors,si,si drift detector,front-end electronics design,high speed semi-gaussian shaping amplifier,higher rate capability,low noise front-end electronics,spectroscopy applications,input output
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