3d Integration Technology Using W2w Direct Bonding And Tsv For Cmos Based Image Sensors

Nga. P. Pham,Nina Tutunjyan, Danny Volkaerts,Lan Peng, Geraldine Jamison,Deniz Sabuncuoglu Tezcan

2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)（2015）

引用 2|浏览40

暂无评分

摘要

This paper presents a 3D integration technology for imager application using wafer level permanent oxide to oxide bonding and TSV process for backside illuminated (BSI) CMOS image sensor (CIS). The process allows the stacking and electrical connection of two chips-illuminated imager chip on top of a readout and image processing chip by mean of a via last style TSV.

查看译文

关键词

3D integration technology,W2W direct bonding,TSV process,CMOS based image sensors,wafer level permanent oxide-to-oxide bonding,readout chip,image processing chip

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要