Two Dimensional Mos2/Graphene P-N Heterojunction Diode: Fabrication And Electronic Characteristics
Journal of Alloys and Compounds(2016)
Abstract
Molybdenum disulfide (MoS2) films are currently the most potential semiconductor materials of the two-dimensional nano-material heterojunction. Few-layer MoS2 is an n-type semiconductor that has good mechanical strength, high carrier mobility, and has similar thickness as graphene. Graphene is presently the thinnest two-dimensional material with good thermal conductivity and high carrier mobility. The graphene Fermi level can be precisely controlled using the oxygen adsorption. Therefore, graphene can be tuned from zero-gap to p-type semiconductor material using the amount of adsorbed oxygen. In this study we combine few-layer MoS2 and graphene to produce a heterojunction and exhaustively study the interface properties for heterojunction diode application. According to the results, the MoS2 band-gap increases with decreasing thickness. The I-V characteristics of the MoS2/Graphene p-n junction diodes can be precisely tuned by adjusting different thicknesses of the MoS2 films. By applying our fabricating method, MoS2/Graphene heterojunction diode can be easily constructed and have potential to different applications. (C) 2016 Elsevier B.V. All rights reserved.
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Key words
MoS2,Transition metal dichalcogenides,Graphene,Two-dimensional material,Heterojunction diode
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