Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET
Microelectronics Reliability(1998)
摘要
An analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible for GIDL
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关键词
silicon,tunnelling,temperature measurement,tunneling,hot carriers,voltage
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