High turn-off current capability of parallel-connected 4.5 kV trench-IEGTs
Kyoto（2003）
Abstract
The turn-off characteristics of parallel-connected 4.5 kV trench injection enhanced gate transistors (IEGTs) are discussed. The influence of the gate circuit parameters on turn-off current balance was examined in order to realize high turn-off current capability. It is concluded that the reduction of the gate parasitic inductance is important for uniform turn-off operation. At the optimum gate circuit condition, it is shown that the maximum turn-off current increases in proportion to the number of IEGT chips. As a result, a 1300 A turn-off current capability at Tj=100°C is realized using nine parallel-connected IEGT chips in an inductive load circuit and without a snubber circuit
MoreTranslated text
Key words
1300 a,insulated gate bipolar transistors,high-power switching device,parallel-connected iegt chips,power semiconductor devices,saturation voltage,power transistors,uniform turn-off operation,iegt chips,maximum turn-off current,trench iegts,gate parasitic inductance,turn-off current balance,6 micron,12 micron,turn-off current capability,turn-off loss,4.5 kv,semiconductor device breakdown,optimum gate circuit condition,trench iegt,semiconductor device testing,gate parasitic inductance reduction,100 c,trench injection enhanced gate transistors,parallel-connected trench-iegts,injection enhancement igbt,high-voltage applications,power bipolar transistors,electric current,power semiconductor switches,turn-off characteristics,hv applications,bipolar transistor circuits,high turn-off current capability,snubber circuit,losses,inductance,inductive load circuit,gate circuit parameters,semiconductor devices,chip,low voltage,parasitic capacitance,microelectronics,circuits,snubbers
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined