GaN electronic devices for future systems

Microwave Symposium Digest, 1999 IEEE MTT-S International（1999）

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Abstract

There is an extensive effort to develop GaN and the related alloys for electronic device applications. The primary focus is the development of microwave power devices, and in this area, AlGaN/GaN HEMTs have demonstrated record output power densities. The motivation for pursuing GaN for microwave power applications and the current status of the GaN electronic device technology are presented.

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Key words

iii-v semiconductors,aluminium compounds,gallium compounds,microwave field effect transistors,microwave power transistors,power hemt,wide band gap semiconductors,algan-gan,algan/gan hemt,gan electronic device,microwave power transistor,metallization,gold,power density

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