Ternary Pb1-xCdxSe films grown by molecular beam epitaxy on GaAs/ZnTe hybrid substrates

•The high quality monocrystalline Pb1−xCdxSe epitaxial films grown by MBE technique.•HRXRD analysis reveals that introduction of Cd atoms into the crystal lattice of PbSe decreases the lattice constant.•The energy gap of Pb1−xCdxSe films increases with the increasing Cd content.•The introduction of Cd atoms into the crystal lattice of PbSe significantly reduces hole concentration.