Ambipolar solution-processed CH3 NH3 PbBr3 perovskite phototransistors with ultra-thin Al2O3 protective layer
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)(2018)
Abstract
Organic-inorganic halide perovskite materials are attracting great attention for their excellent photoelectronic properties. Here we report the CH
3
NH
3
PbBr
3
perovskite phototransistors with bipolar behaviors. The photoresponsivity of the perovskite devices reaches 4 AW
-1
on V
GS
= -2.2 V. In addition, the stability of organolead halide perovskite phototransistors is further improved by inserting ultra-thin Al
2
O
3
protective layer. The solution-based process and excellent device performance facilitate CH
3
NH
3
PbBr
3
perovskite as candidate materials for photoelectronic applications.
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Key words
perovskite,CH3NH3PbBr3,phototransistors,protective layer
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