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High operating temperature InAs/GaSb type-II superlattice detectors on GaAs substrate for the long wavelength infrared

R. Müller, V. Gramich,Matthias Wauro,Jasmin Niemasz,Lutz Kirste,Volker Daumer, A. Janaszek,J. Jureńczyk,Robert Rehm

Infrared Physics & Technology（2019）

Cited 17|Views15
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Abstract
•Optically immersed InAs/GaSb T2SL photoconductors for the LWIR at HOT.•Development of linearly graded metamorphic buffer layer for GaSb-based devices on GaAs.•T2SL detector characterization in the TEC-accessible temperature range.•T2SL photoconductors for the LWIR approach the spectral detectivity of MCT for HOT.
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InAs/GaSb,T2SL,TEC,Infrared detector,HOT
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