Simulation and mechanism analysis of MOSFET threshold voltage drift induced by manufacturing process
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)(2018)
Abstract
Three problems of threshold voltage(Vth) drift of Trench-MOSFET induced by manufacturing process are discussed. From the simulation results, it can be found that the N
+
source impurity compensation caused by P
+
ion implantation results in a low concentration N
-
region, which significantly increases the threshold voltage, and the width of N
-
region can cause the drift rate to reach 53.3%. The channeling effect of P
+
ion implantation also contributes to the threshold voltage drift up to 16.7% due to the increasing of doping concentration in p-body area. The temperature of the rapid-thermal-annealing (RTA) process of the source metal Ti/TiN layer influences the source electrode parasitic resistance, which makes the threshold voltage slightly drift up to 6.7%.
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Key words
MOSFET,threshold voltage,process,drift,reliability
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