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The Performance Of Sintered Nanocopper Interconnections For High Temperature Device

Q. Liu,Xianping Chen,Jie Zhu, HuanKun Zhang, Jiang Song Zhang,Jing Guo Zhang, Li Gen Wang,Huaiyu Ye,Sau Wee Koh,G.O. Zhang,G.Q. Zhang

2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT)（2018）

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Abstract
IGBT device is developed from silicon to wide bandgap semiconductor materials, and its working temperature has reached to 300 degrees C, so the encapsulation is particularly important. NanoCu paste is investigated under H2 at 300 degrees C. A chip is linked to DBC substrate by nanoCu paste under air with different temperature. Results shows the increase of sintered time temperature effectively reduce the porosity of sinteredlayer and enhance the strength.
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Key words
Nanocopper, die attach, Power device, paste
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