WeChat Mini Program
Old Version Features

Origin of Low-Frequency Noise in Triple-Gate Junctionless N-Mosfets

Theodoros A. Oproglidis,Theano A. Karatsori,Christoforos G. Theodorou,Dimitrios Tassis,Sylvain Barraud,Gerard Ghibaudo,Charalabos A. Dimitriadis

IEEE Transactions on Electron Devices（2018）

Cited 5|Views55
Key words
1/f noise,junctionless (JL),random telegraph noise (RTN),triple-gate (TG) n-MOSFETs
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined