Reflectance Of Vuv-Sensitive Sipm Surfaces In Liquid Xenon

M. Wagenpfeil,Tobias Ziegler,A. Fieguth,Judith Schneider,Thilo Michel, Christian Weinheimer

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT(2019)

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摘要
The nEXO experiment will operate an ultra-low background time projection chamber filled with 5 t of isotopically enriched liquid xenon (LXe) for the search for the neutrinoless double beta decay in Xe-136. The detector will use 4 m(2) of silicon photomultipliers (SiPMs) operated at about -104 degrees C to collect the scintillation light. There are strong requirements on the background levels, light collection efficiency and SiPM performance to set the most stringent limits on the half-life. Detecting the 0v beta beta-decay would have wide-spread implications for neutrino physics.The SiPMs need to be sensitive to the vacuum-ultraviolet scintillation light of LXe at 178 nm which is not given for off-the-shelf SiPMs. The SiPM performance requirements adopted by nEXO are (among others) a photon detection efficiency of at least 15% at 178 nm, a correlated avalanche probability of less than 20% and a low dark-rate. Additionally, the VUV-reflectance of the SiPM surface in LXe is an important parameter for optimal light collection and thus the energy resolution of nEXO.We present measurements with state-of-the-art VUV-sensitive SiPMs focusing on the surface VUV-reflectance in liquid xenon.
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关键词
VUV-sensitive, Silicon photomultipliers, Liquid xenon, Reflectance
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