A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology
IEEE Microwave and Wireless Components Letters（2018）
Abstract
This letter presents a 1 to >110-GHz ultrawideband traveling-wave amplifier (TWA) based on 500-nm transferred-substrate InP double-heterojunction bipolar transistor technology. The HBT cells are realized with inductive peaking at the output and match the phase delay between individual stages. The collector bias is slightly below the value for the maximum current gain. This allows a frequency-invar...
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Key words
Delays,Indium phosphide,III-V semiconductor materials,Double heterojunction bipolar transistors,Amplifiers,Frequency measurement
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