On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms(2019)

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摘要
We combine focused experiments with molecular dynamics simulations to investigate in detail the formation of {0 0 1} loops in nanosecond laser-annealed silicon. We demonstrate that at temperatures close to the melting point, self-interstitial rich silicon is driven into dense liquid-like droplets that are highly mobile within the solid crystalline matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {0 0 1} loops through a liquid-to-solid phase transition in the nanosecond timescale.
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关键词
Si,Annealing,Atomistic simulation,Molecular dynamics,Extended defects
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