Ablation threshold measurements and surface modifications of 193 nm laser irradiated 4H-SiC

•An ArF 193 nm excimer laser has been used to irradiate 4H:SiC compound semiconducting polished wafers.•Finite Elementa Method COMSOL™ 5.3 used to model the temperature highlighting heat effects at the substrate surface.•An ablation threshold of FT = 925 ± 80 mJ cm−2 is reported from etch rate measurements.•Growth of nodule-like structures decorated with nano spherical particles is observed on the floor of the ablation crater.•Micro Raman spectroscopy has been used to analyse the decomposition of 4H:SiC.