Role of ion energy flux on the structural and morphological properties of silicon oxy-nitride composite films deposited by plasma focus device

Crystalline silicon oxy-nitride (SiON) composite films are deposited on Si substrate for multiple (5, 15, 25 and 50) focus shots (FS) by plasma focus device. The X-rays diffraction patterns reveal the development of various diffraction peaks related to Si, Si3N4, and SiO2 phases which confirms the formation of SiON composite film. The intensity of Si3N4 (1 0 2) plane is linearly increased with the increase of FS. The Si3N4 (1 0 2) phase does not nucleate for 5 FS. Raman analysis confirms the formation of -Si-N phase. Raman and Fourier transform infrared spectroscopy analysis reveals that the strength of chemical bonds like Si-N, Si-O formed during the deposition process of SiON composite films is associated with the bonds intensity which in turn depends on the number of FS. The field emission scanning electron microscopic analysis reveals that the surface morphology like size, shape and distribution of micro/nano-dimensional particles, film compactness and the formation of micro-rods, micro-teethes and micro-tubes of SiON composite films is entirely associated with the rise in substrate surface transient temperature which in turn depends on the increasing number of FS. The EDX spectrum confirms the presence of Si (22.5 +/- 4.7 at. %), N(13.4 +/- 4.5 at. %) and O (54.7 +/- 11.3 at. %) in the SiON composite film. The thickness of SiON composite film deposited for 50 FS is found to approximate to 15.47 mu m.