Novel Selection Criteria of Primary Side Transistors for LLC Resonant Converters
2018 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL)(2018)
摘要
An insightful evaluation of commercial high-voltage power MOSFETs for soft-switching converters is reported in this paper with special emphasis on elucidating power loss contributions and electrical parameter requirements. Experimental tests have been carried out to evaluate different Silicon Super-Junction technologies used in the primary side of a 600 W half-bridge LLC resonant converter operating in inductive mode. Unexpectedly, none of the existing figures of merit, inferred from datasheets, can predict the performance ranking due to the additional soft-switching losses (Esw
_SOFT
). Subsequently, a new characterization test based on a pulsed I-V system is suggested and proved to quantify E
SW_SOFT
.
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关键词
LLC,figure of merit,soft-switching,super-junction MOSFET
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