Enhanced interface characteristics of PA-ALD HfOxNy/InGaAs MOSCAPs using IPA oxygen reactant and cyclic N2 plasma
IEEE Electron Device Letters(2018)
摘要
This letter reports high-quality plasma-assisted atomic-layer-deposited HfOxNy by using isopropyl alcohol (IPA) oxidant and cyclic N2 plasma treatment demonstrated on n-type In0.53Ga0.47As. Improved interface characteristics, with suppressed frequency dispersion and surface oxidation, were demonstrated and resulted in significantly decreased interface trap density (Dit) of 4.5 × 1011 eV-1cm-2 at t...
更多查看译文
关键词
Hafnium compounds,Nitrogen,Surface treatment,Capacitance-voltage characteristics,Oxidation,Plasmas,Logic gates
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要