Enhanced interface characteristics of PA-ALD HfOxNy/InGaAs MOSCAPs using IPA oxygen reactant and cyclic N2 plasma

This letter reports high-quality plasma-assisted atomic-layer-deposited HfOxNy by using isopropyl alcohol (IPA) oxidant and cyclic N2 plasma treatment demonstrated on n-type In0.53Ga0.47As. Improved interface characteristics, with suppressed frequency dispersion and surface oxidation, were demonstrated and resulted in significantly decreased interface trap density (Dit) of 4.5 × 1011 eV-1cm-2 at t...