Self-Limited and Forming-Free CBRAM Device With Double Al 2 O 3 ALD Layers

Self-limited and forming-free Cu-based CBRAM devices with a double Al2O3 atomic layer deposition layer (D-ALD) structure were developed. The proposed structure offers desirable properties such as forming free (Vforming = VSET), self-limited resistive switching with very low programming current (~10 nA), high ON/OFF ratio (>100), and nonlinear I-V (NLread and NLSET ~ 10) at low resistance state. Th...