Thermally enhanced GaN hybrid-IC power amplifier using embedded IC process in a copper sheet

This article introduces new packaging that improves the heat dissipation of RF power devices. Typically, power devices are mounted on a printed circuit board, in which the heat dissipation is made only through the bottom area of a device. The heat dissipation of the proposed structure is made through the bottom and side areas. As a result, proposed technology provides 30% improved heat dissipation in the RF GaN power amplifier. A copper sheet having a high thermal conductivity of around 400 W/mK is used as a core material to embed the power device. The measured results show that the drain efficiency of the fabricated X-band power amplifier (PA) improved by about 13% in the proposed package structure.