Plasma based nitrogen ion implantation to hydrogenated diamond-like carbon films

Takashi Kimura, Hidekazu Yanai,Setsuo Nakao,Kingo Azuma

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms（2018）

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摘要

•Surface of hydrogenated DLC films is modified by implantation of nitrogen ions.•Relative content of nitrogen on the modified surface is about 10%, based on XPS spectrum.•Electrical resistivity decreases from 2.1 to 0.08 Ωcm with the increase in modification time.•Resistivity of nitrogen ion implanted layer reaches a minimum of about 0.01 Ωcm.

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关键词

Nitrogen plasma,Plasma based ion implantation,Diamond-like carbon films,Carbon nitride,Electrical conductivity

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