SJ-MOSFET with wave-type field limiting ring for high di/dt robustness of body diode reverse recovery

Xin Tong,Siyang Liu,Weifeng Sun,Lanlan Yang,Zhiyuan Xu, Qixiang Wu, Xiaoshuang Zhang,Jianhui Wu,Zhuo Yang,Zongqing Li,Yuanzheng Zhu

Solid-State Electronics（2018）

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摘要

•A WFLR structure is proposed to improve the body diode reverse recovery robustness.•The WFLR-SJ-MOSFET will not sacrifice other characteristics of the device.•The WFLR structure can suppress the dynamic avalanche in terminal boundary region when the SJ-MOSFET body diode goes through reverse recovery.

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关键词

SJ-MOSFET,Reverse recovery robustness,Body diode

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