Influence Of An Integrated Quasi-Reference Electrode On The Stability Of All -Solid-State Algan/Gan Based Ph Sensors
JOURNAL OF APPLIED PHYSICS(2018)
摘要
An all-solid-state AlGaN/GaN based ion-sensitive heterostructure field effect transistor (ISHFET) pH sensor was fabricated by integrating a noble metal (Au) quasi-reference electrode to improve the device stability when measuring the pH value of a small aqueous volume. In this paper, the influence of the size of the quasi-reference electrode against the stability of the pH readings was investigated. Through optimizing the size of the integrated quasi-reference electrode, the all-solid-state ISHFET pH sensor can sustain stable pH measurements for aqueous solutions of micro-litre size. A sensitivity of 55 mV/pH was achieved by the pH sensor at room temperature. Thus, the device may have potential uses in biomedical applications which require small volume pH measurements. Published by AIP Publishing.
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关键词
algan/gan,quasi-reference,all-solid-state
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