Controlling performance of a-Si:H solar cell with SnO2:F front electrode by introducing dual p-layers with p-a-SiOx:H/p-nc-SiOx:H nanostructure

•The destabilized problems of FTO was solved by using p-a-SiOx:H blocking layer.•The holes transmission and recombination can be controlled by dual p layers.•A simple and effective method can improve the Voc and Jsc of a-Si:H solar cells.