GaN-HEMT asymmetric three-way Doherty power amplifier using GPD

Hyungmo Koo,Hyunuk Kang,Wooseok Lee,Hwiseob Lee,Kang-Yoon Lee,Keum Cheol Hwang,Youngoo Yang

IET Microwaves, Antennas & Propagation（2018）

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摘要

A gallium-nitride high electron mobility transistor (GaN-HEMT) three-way asymmetric Doherty power amplifier using an unequal three-way Gysel power divider (GPD) is presented in this study. Considering the output power capacity of transistors, the peaking amplifier was designed to have an output power capacity that is 1.5 times larger than that of the carrier amplifier through the use of a parallel...

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关键词

high electron mobility transistors,III-V semiconductors,optimisation,power dividers,UHF power amplifiers

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