Modeling of GaN HEMTs on silicon with trapping and self-heating effects for RF applications

In this paper, the pulsed IV, small-signal, and load-pull measurements are employed for characterization of GaN-on-Si HEMTs to establish the large-signal model for RF applications. A modified Angelov model was proposed, which achieved excellent agreement with the measured results. Both trapping and self-heating effects are identified based on the pulsed IV measurements, while the charge model are established based on small-signal measurements. Finally, the load-pull simulation and measurements were used to verify the accuracy oflarge-signal characteristics.