Mid-Wavelength High Operating Temperature Barrier Infrared Detector And Focal Plane Array

We analyze and compare different aspects of InAs/InAsSb and InAs/GaSb type-II superlattices for infrared detector applications and argue that the former is the most effective when implemented for mid-wavelength infrared detectors. We then report results on an InAs/InAsSb superlattice based mid-wavelength high operating temperature barrier infrared detector. At 150 K, the 50% cutoff wavelength is 5.37 mu m, the quantum efficiency at 4.5 mu m is similar to 52% without anti-reflection coating, the dark current density under -0.2V bias is 4.5 x 10(-5) A/cm(2), and the dark-current-limited and the f/2 black-body (300K background in 3-5 mu m band) specific detectivities are 4.6 x 10(11) and 3.0 x 10(11) cm-Hz(1/2)/W, respectively. A focal plane array made from the same material exhibits a mean noise equivalent differential temperature of 18.7 mK at 160K operating temperature with an f/2 optics and a 300K background, demonstrating significantly higher operating temperature than InSb. Published by AIP Publishing.