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GIDL effect observed in FinFET shapes and Vt implant energy

Ting-Wei Chao,Tien-Szu Shen,Chii-Ruey Lin,Ching-Chuan Chou, Chia-Hsien Chang,Wen-Shiang Liao,Mu-Chun Wang

2018 7th International Symposium on Next Generation Electronics (ISNE)（2018）

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Abstract
The leakage of FinFETs with the different features and V t implant energy is observed and strongly related to the previous factors. Due to the process controllability, especially in photo-lithography, the multi-channel shape to promote the drive current seems not easy to be controlled well and deteriorates the desired target. The GIDL effect coming from the lower V t implant energy is more distinct than at the higher with the multi-channel FinFETs. However, this phenomenon was not apparently observed in the single FinFET.
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Key words
GIDL,FinFET,drive current,off-state current,VT implant energy
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