30 kV Pulse Diode Stack Based on 4H-SiC

The paper reports on the studies of static and dynamic characteristics of 30 kV diode stacks based on 4H-SiC drift step recovery diodes (DSRDs). It was found that the optimal performance in terms of blocking voltage and switching speed can be achieved with 2 kV DSRD dies. Fifteen 2 kV DSRD dies were connected in series and sealed with molding compound. The stacks were dynamically tested in a special oscillator circuit. Repetitive voltage pulses of 30.5 kV with the leading edge of 1.6 ns were demonstrated.