Electrical properties and conduction mechanism of in situ HCl-doped emeraldine salt polyaniline films deposited on n-ZnS/p-Si(100)

The diode properties and conduction mechanism of the p-PAni/n-ZnS/p-Si(100) synthesize via oxidative polymerization at room temperature were investigated for the first time. The morphological, optical and electrical/diode properties were studied citing the changes made by integrating ES polyaniline (PAni) films doped with 0.05 M to 0.20 M of HCl on n-ZnS/p-Si(100)–on its properties and performance. The room temperature I-V characteristics of the heterojunction exhibited good rectifying behavior with a breakdown at the reverse bias for the 0.20 M PZ heterojunction. Diode parameters at forward bias such as the cut-in voltage (1.83-3.66 volts), dynamic resistance (3.91-96.13 kΩ), ideality factor (3.05-6.34) and saturation current (7.03×10−8−1.40×10−4 A) were determined. The current transport mechanism were found to be governed dominantly by space – charge limited conduction (SCLC) with possible presence of defects in the surface and in the bulk of the material.