Impact of Phonon Scattering on the Negative-Differential-Resistance Behavior in Graphene Nanoribbon p-n Junctions
IEEE Transactions on Electron Devices(2018)
摘要
In this paper, the effect of electron-phonon scattering on the negative differential resistance of graphene nanoribbon p-n junctions is investigated. The results show that the optical phonon scattering, due to inelasticity, significantly increases the valley current such that the peak-to-valley ratio decreases several orders of magnitude compared to ballistic approximation. It also shifts up the v...
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关键词
Scattering,Phonons,Graphene,Photonic band gap,Current density,Tunneling,Nanoscale devices
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