Effect of High Oxygen Partial Pressure on Carrier Transport Mechanism in a-InGaZnO TFTs

In this paper, the influence of oxygen partial pressure (PO2) during physical vapor deposition on the field-effect mobility of amorphous InGaZnO (IGZO) thin-film transistor (TFT) is investigated in a wide range of PO2. The field-effect mobility reduced from 12 to 0.1 cm2/V · s when the PO2 is increased from 0.3 to 1.5 mTorr. Temperature-dependent TFT measurements suggest that carrier transport in ...