Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes

Arto Javanainen,Henrique Vazquez Muinos,K. Nordlund,Flyura Djurabekova,K.F. Galloway,Marek Turowski,Ronald D. Schrimpf

IEEE Transactions on Device and Materials Reliability（2018）

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摘要

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation.

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关键词

Silicon carbide,Ions,Lattices,Heating systems,Schottky diodes,Leakage currents,Radiation effects

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