Negative and Positive Muon-Induced Single Event Upsets in 65-nm UTBB SOI SRAMs

We have performed an irradiation test of low-energy positive and negative muons on 65-nm ultra-thin body and thin buried oxide silicon-on-insulator static random access memories. The single event upset (SEU) cross sections were measured systematically as a function of incident muon momentum and operating supply voltage. The experimental results show that the negative muon SEUs occur at about three...