Thermoelectric properties determination of multilayered semiconductor materials at harmonic single-frequency excitation of temperature field

During several decades, interest in thermal electricity has rose rapidly [1,2]. Thermoelectric devices provide unique abilities and, therefore, are used in assemblies where any other way of direct or invert conversion of heat into electricity is difficult. For example, they are used for thermovisors cooling or combustion engines efficiency increasing [3,4]. The amount of thermal electricity application would significantly increase if thermoelectric converters efficiency will be increased up to 20-30%. The most promising variant of solution for the issue is the search for new materials with maximum possible thermoelectric figure of merit Z [5]. To achieve the high values of the parameter, it is necessary to ensure the lowest thermal conductivity of the material at the highest specific electrical conductivity and thermal electromotive force coefficient of a material. The materials with high Z are constantly searched for, at that, some new pages of material science and thermal electricity are discovered.