High-Frequency Electromagnetic Simulation and Optimization for GaN-HEMT Power Amplifier IC

IEEE Transactions on Electromagnetic Compatibility(2019)

引用 17|浏览4
暂无评分
摘要
Rapid increase in operating frequencies and power density necessitate the importance of examining electromagnetic compatibility/electromagnetic emissions (EMEs) from high-frequency and high-power integrated circuits (ICs). In this paper, a simulation method is demonstrated to study the EME using gallium nitride high electron mobility transistor power amplifier IC chip as a device under test. Simul...
更多
查看译文
关键词
Integrated circuit modeling,Solid modeling,Layout,Transistors,Semiconductor device modeling,Computational modeling
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要